Internally wavelength stabilized 910 nm diode lasers with epitaxially stacked multiple active regions and tunnel junctions

نویسندگان

چکیده

We present a multi-active-region bipolar-cascade distributed-Bragg reflector (DBR) laser emitting around 910 nm. The three active regions and two tunnel junctions are located in single waveguide core sharing the same third-order vertical mode. A slope efficiency of 2.25 W/A was measured with threshold current density 400 A/cm2. Due to implemented 7th Bragg order surface grating, exhibits narrow optical spectrum width 0.3 nm thermal detuning 60 pm/K.

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ژورنال

عنوان ژورنال: Electronics Letters

سال: 2021

ISSN: ['0013-5194', '1350-911X']

DOI: https://doi.org/10.1049/ell2.12366